Photo-etching of HVPE-grown GaN: Revealing extended non-homogeneities induced by periodic carrier gas exchangeWEYHER, J. L; SOCHACKI, T; BOCKOWSKI, M et al.Journal of crystal growth. 2014, Vol 403, pp 77-82, issn 0022-0248, 6 p.Conference Paper

Growth of GaN:Mg crystals by high nitrogen pressure solution method in multi-feed―seed configurationGRZEGORY, I; BOCKOWSKI, M; LUCZNIK, B et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 50-55, issn 0022-0248, 6 p.Conference Paper

Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seedsAMILUSIK, M; SOCHACKI, T; LUCZNIK, B et al.Journal of crystal growth. 2014, Vol 403, pp 48-54, issn 0022-0248, 7 p.Conference Paper

Multi feed seed (MFS) high pressure crystallization of 1―2 in GaNBOCKOWSKI, M; GRZEGORY, I; LUCZNIK, B et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 5-10, issn 0022-0248, 6 p.Conference Paper

HVPE-GaN growth on misoriented ammonothermal GaN seedsSOCHACKI, T; AMILUSIK, M; GRZEGORY, I et al.Journal of crystal growth. 2014, Vol 403, pp 32-37, issn 0022-0248, 6 p.Conference Paper

Analysis of self-lift-off process during HVPE growth of GaN on MOCVD-GaN/sapphire substrates with photolitographically patterned Ti maskAMILUSIK, M; SOCHACKI, T; LUCZNIK, B et al.Journal of crystal growth. 2013, Vol 380, pp 99-105, issn 0022-0248, 7 p.Article